FDD86102
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD86102
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 3.1 W 100 V Continuous Drain Current (ID):36 A 13.4 nC
| Parameter | Value |
|---|---|
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 62 W |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 3.1 V |
| Number of Channels | 1 |
| Input capacitance | 1.035 nF |
| Continuous Drain Current (ID) | 36 A |
| Rds On Max | 24 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 7.6 ns |
| Turn-Off Delay Time | 13.4 ns |
| Element Configuration | Single |
| Fall Time | 2.9 ns |
| Rise Time | 3 ns |
| Gate Charge | 13.4 nC |
| Drain to Source Resistance | 19 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3.1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 180
Distributors
pcbx
pcbxUnit Price$0.97910
Ext.Price$0.97910
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.97910 | $0.97910 |
| 10 | $0.82781 | $8.27810 |
| 25 | $0.77663 | $19.41575 |
| 50 | $0.72861 | $36.43050 |
| 100 | $0.68356 | $68.35600 |
| 300 | $0.66022 | $198.06600 |
| 500 | $0.63768 | $318.84000 |
| 1000 | $0.61469 | $614.69000 |